Electrical transport quantum effects in the In,.,,Gao.47As/ln0.52A10.48As heterostructure on silicon
نویسنده
چکیده
Electrical transport in a modulation doped heterostructure of I~.~.s3G~.,,As/In,52Alo.48as grown on Si by molecular beam epitaxy has been measured. Quantum Hall effect and Subnikov-De Haas oscillations were observed indicating the two-dimensional character of electron transport. A mobility of 20 000 cm’/V s was measured at 6 K for an electron sheet concentration of 1.7X10” cm-’ . Transmission electron microscopy observations indicated a significant surface roughness and high defect density of the InGaAs/InAlAs layers to be present due to the growth on silicon. In addition, fine-scale composition modulation present in the Irb.s3G~b.47As/In,,~~.~s~ may further limit transport properties.
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